Sumários
Q & A Session.
18 Outubro 2024, 14:30 • José Figueiredo
Topics covered include details of the PN junction, depletion region formation, tunnel diode and tunneling effect, charge diffusion vs. charge drifting, absorption coefficient, penetration depth; PIN homo- and hetero-structures.
Q & A Session.
18 Outubro 2024, 13:30 • José Figueiredo
Topics covered include details of the PN junction, depletion region formation, tunnel diode and tunneling effect, charge diffusion vs. charge drifting, absorption coefficient, penetration depth; PIN homo- and hetero-structures.
Band-gap engineering. Resonant tunneling effect and N-shape I-V characteristics. Solid state neuron based on RTD oscillators.
4 Outubro 2024, 14:30 • José Figueiredo
Degenerate pn
junction. Current-voltage characteristic of degenerate pn junction: the
negative differential resistance (conductance). The tunnel diode. Very high
frequency oscillator based on tunnel diode. Heterojunctions. Growth of
semiconductor layers (semiconductor thin films) on a suitable substrate.
Homoepitaxy. Heteroepitaxy. Impact of the lattice mismatch between the film and
the substrate lattice constants. Bandgap energy Eg and lattice constant a for
various III–V alloys of GaP, GaAs, InP, and InAs. Band-gap engineering. Growth
of a resonant tunneling diode (RTD) structure (MBE and MOCVD techniques).
Resonant tunneling effect and N-shape I-V characteristics. Generation of
terahertz oscillations. Excitability in physical systems. Solid state neuron based on RTD
oscillators.
Generation of
terahertz oscillations: https://global.canon/en/technology/terahertz-device-2023.html
The tunnel diode. Crystal growth or material deposition. Heterojunctions. Lattice mismatch. Band-gap engineering.
4 Outubro 2024, 13:30 • José Figueiredo
Degenerate pn junction. Current-voltage characteristic of degenerate pn junction: the negative differential resistance (conductance). The tunnel diode. Very high frequency oscillator based on tunnel diode. Heterojunctions. Growth of semiconductor layers (semiconductor thin films) on a suitable substrate. Homoepitaxy. Heteroepitaxy. Impact of the lattice mismatch between the film and the substrate lattice constants. Bandgap energy Eg and lattice constant a for various III–V alloys of GaP, GaAs, InP, and InAs. Band-gap engineering. Growth of a resonant tunneling diode (RTD) structure (MBE and MOCVD techniques). Resonant tunneling effect and N-shape I-V characteristics. Generation of terahertz oscillations. Excitability in physical systems. Solid state neuron based on RTD oscillators.
Light Emitting Diodes. Device Structures. LED Materials. LED Output Spectrum. LED output wavelength variations. Heterojunctions.
30 Setembro 2024, 15:30 • José Figueiredo
Light Emitting Diodes. Device Structures. LED Materials. LED Output Spectrum. LED output wavelength variations. Heterojunctions.
Bibliography: SEMICONDUCTOR SCIENCE AND LIGHT EMITTING DIODES; Optoelectronics and Photonics: Principles and Practices, 2nd Edition Pearson Education